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Titolo:
MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays
Autore:
Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE;
Indirizzi:
Raytheon Infrared Operat, Goleta, CA 93117 USA Raytheon Infrared Operat Goleta CA USA 93117 Operat, Goleta, CA 93117 USA HRL Labs, Malibu, CA 90265 USA HRL Labs Malibu CA USA 90265HRL Labs, Malibu, CA 90265 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 6, volume: 30, anno: 2001,
pagine: 619 - 622
SICI:
0361-5235(200106)30:6<619:MGOHOS>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; CDTE;
Keywords:
HgCdTe; heteroepitaxy; infrared detectors; molecular beam epitaxy (MBE); HgCdTe/Si; MWIR;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Maranowski, KD Raytheon Infrared Operat, 75 Coromar Dr, Goleta, CA 93117 USA Raytheon Infrared Operat 75 Coromar Dr Goleta CA USA 93117
Citazione:
K.D. Maranowski et al., "MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays", J ELEC MAT, 30(6), 2001, pp. 619-622

Abstract

HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100 mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The structural quality of these films is excellent, as demonstrated by x-ray rocking curves with full widths at half maximum (FWHMs) of 80-100 arcsec, :Ind etch pit densities from 1 x 10(6) to 7 x 10(6) cm(-2). Morphological defect densities forthese layers are generally less than 1000 cm(-2). Improving Hg flux coverage of the wafer during growth can reduce void defects near the edges of thewafers. Improved tellurium source designs have resulted in better temporalflux stability and a reduction of the center to edge x-value variation from 9% to only 2%, Photovoltaic MWIR detectors have been fabricated from someof these 100 mm wafers, and the devices show performance at 140 K which iscomparable to other MWIR detectors grown on bulk CdZnTe substrates by MBE and by liquid phase epitaxy.

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Documento generato il 02/06/20 alle ore 23:53:01