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Titolo:
200 mm GaAs crystal growth by the temperature gradient controlled LEC method
Autore:
Seidl, A; Eichler, S; Flade, T; Jurisch, M; Kohler, A; Kretzer, U; Weinert, B;
Indirizzi:
Freiberger Cpds Mat GmbH, D-09599 Freiberg, Germany Freiberger Cpds Mat GmbH Freiberg Germany D-09599 9599 Freiberg, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 2-4, volume: 225, anno: 2001,
pagine: 561 - 565
SICI:
0022-0248(200105)225:2-4<561:2MGCGB>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
NUMERICAL-SIMULATION; MELT; CONVECTION;
Keywords:
characterization; computer simulation; heat transfer; interfaces; liquid encapsulated Czochralski method; semiconducting gallium arsenide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Seidl, A Freiberger Cpds Mat GmbH, Junger Lowe Schacht 5, D-09599 Freiberg, Germany Freiberger Cpds Mat GmbH Junger Lowe Schacht 5 Freiberg Germany D-09599
Citazione:
A. Seidl et al., "200 mm GaAs crystal growth by the temperature gradient controlled LEC method", J CRYST GR, 225(2-4), 2001, pp. 561-565

Abstract

This paper presents first results of 200 mm diameter semi-insulating (SI) GaAs crystal growth experiments. The LEC method was used on condition that temperature gradients in critical regions can be controlled adequately. Forfurnace design and process parameter evaluation, powerful numerical simulation was indispensable. The structural and electrical properties of crystals grown by this temperature gradient controlled LEC method are similar to those known for state-of-the-art 150 mm SI GaAs crystals. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 02:20:18