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Titolo:
High-quality and low-temperature epitaxial Si films deposited at very highdeposition rate
Autore:
Bergmann, RB; Oberbeck, L; Wagner, TA;
Indirizzi:
Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany Univ Stuttgart Stuttgart Germany D-70569 ekt, D-70569 Stuttgart, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 2-4, volume: 225, anno: 2001,
pagine: 335 - 339
SICI:
0022-0248(200105)225:2-4<335:HALESF>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
SOLAR-CELLS; SILICON; SURFACE; GROWTH;
Keywords:
characterization; physical vapor deposition processes; semiconducting silicon; solar cells;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Bergmann, RB Univ Stuttgart, Inst Phys Elekt, Pfaffenwaldring 47, D-70569 Stuttgart, Germany Univ Stuttgart Pfaffenwaldring 47 Stuttgart Germany D-70569
Citazione:
R.B. Bergmann et al., "High-quality and low-temperature epitaxial Si films deposited at very highdeposition rate", J CRYST GR, 225(2-4), 2001, pp. 335-339

Abstract

Low-temperature epitaxy at temperatures between 550 degreesC and 650 degreesC using ion-assisted deposition enables the formation of Si films with minority-carrier diffusion lengths deposited at rates previously only conceivable using high-temperature chemical vapor deposition at growth temperatures exceeding 1000 degreesC. Using quantum efficiency and photoluminescence measurements, we investigate charge carrier recombination in Si films formedby ion-assisted deposition at temperatures between 460 degreesC and 650 degreesC. Silicon films deposited at a temperature between 460 degreesC and 510 degreesC display relatively short minority-carrier diffusion lengths peaked at a deposition rate around 0.25 mum/min, while we find high diffusion lengths > 20 mum in Si films deposited at a temperature greater than or equal to 550 degreesC with deposition rates between 0.2 and 0.8 mum/min. At a deposition temperature of 650 degreesC we achieve a minority carrier diffusion length of 40 mum in a 21 mum thick epitaxial Si film deposited at a rate of 0.8 mum/min. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/10/20 alle ore 06:37:42