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Titolo:
Formation of large-grained uniform poly-Si films on glass at low temperature
Autore:
Aberle, AG; Harder, NP; Oelting, S;
Indirizzi:
Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia Univ New S Wales Sydney NSW Australia 2052 r, Sydney, NSW 2052, Australia ANTEC GmbH, D-65779 Kelkheim, Germany ANTEC GmbH Kelkheim Germany D-65779 NTEC GmbH, D-65779 Kelkheim, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 2-3, volume: 226, anno: 2001,
pagine: 209 - 214
SICI:
0022-0248(200106)226:2-3<209:FOLUPF>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
ALUMINUM-INDUCED CRYSTALLIZATION; SOLAR-CELLS; SILICON; PHASE;
Keywords:
crystal structure; physical vapor deposition processes; polycrystalline deposition; elemental solids; semiconducting silicon; solar cells;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Aberle, AG Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052,Australia Univ New S Wales Sydney NSW Australia 2052 NSW 2052, Australia
Citazione:
A.G. Aberle et al., "Formation of large-grained uniform poly-Si films on glass at low temperature", J CRYST GR, 226(2-3), 2001, pp. 209-214

Abstract

The formation of device-grade polycrystalline silicon (poly-Si) films on low-cost substrates at low temperature using simple and fast processes is ofenormous interest for photovoltaics and lar ge-area electronics. In this paper we report the realisation of thick (similar to 5 mum), large-grained (similar to 5 mum), uniform poly-Si films on glass at a substrate temperature below 650 degreesC. This important technological progress was achieved byusing ion-assisted deposition of silicon for thickening a thin poly-Si seeding layer grown on glass by aluminium-induced crystallisation of amorphoussilicon. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 10:44:10