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Titolo:
La1-xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure
Autore:
Tada, M; Yamada, J; Srinivasu, VV; Sreedevi, V; Kohmoto, H; Hashizume, A; Inamori, Y; Tanaka, T; Harrou, A; Nogues, J; Munoz, JS; Colino, JM; Endo, T;
Indirizzi:
Mie Univ, Fac Engn, Tsu, Mie 5148507, Japan Mie Univ Tsu Mie Japan 5148507 ie Univ, Fac Engn, Tsu, Mie 5148507, Japan Toba Natl Coll Marine Technol, Toba, Mie 5178501, Japan Toba Natl Coll Marine Technol Toba Mie Japan 5178501 , Mie 5178501, Japan Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain Univ Autonoma Barcelona Bellaterra Spain 08193 , Bellaterra 08193, Spain Univ Castilla La Mancha, Dept Fis Aplicada, E-13071 Ciudad Real, Spain Univ Castilla La Mancha Ciudad Real Spain E-13071 071 Ciudad Real, Spain
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1, volume: 229, anno: 2001,
pagine: 415 - 418
SICI:
0022-0248(200107)229:1<415:LTFGBI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE; MAGNETORESISTANCE; PLASMA;
Keywords:
nucleation; physical vapor deposition processes; manganites; perovskites; magnetic materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Endo, T Mie Univ, Fac Engn, 1515 Kamihama, Tsu, Mie 5148507, Japan Mie Univ 1515 Kamihama Tsu Mie Japan 5148507 u, Mie 5148507, Japan
Citazione:
M. Tada et al., "La1-xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure", J CRYST GR, 229(1), 2001, pp. 415-418

Abstract

High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by theion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (T-s) of 700 degreesC. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (Po) on the crystallinityand c-parameter are studied systematically. The full-width at half-maximum(FWHM) averaged over (0 0 1) and (0 0 2) X-ray diffraction peaks shows a minimum at Po around 2 mTorr for the films grown on MgO. At this Po, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of P-0 similar to2 mTorr. Thec-parameter values are much smaller for the films grown on MgO as comparedto LAG. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 22/09/20 alle ore 20:46:00