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Titolo:
A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
Autore:
Xie, YG; Kasai, S; Takahashi, H; Jiang, C; Hasegawa, H;
Indirizzi:
Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan Hokkaido Univ Sapporo Hokkaido Japan 0608628 oro, Hokkaido 0608628, Japan Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan Hokkaido Univ Sapporo Hokkaido Japan 0608628 oro, Hokkaido 0608628, Japan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 7, volume: 22, anno: 2001,
pagine: 312 - 314
SICI:
0741-3106(200107)22:7<312:ANIIGP>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE QUANTUM-WELLS; PASSIVATION; GAAS; MBE; STATES; MODEL;
Keywords:
Fermi level pinning; gate leakage; InGaAs; insulated gate; interface control; interface states; PHEMT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Xie, YG Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido0608628, Japan Hokkaido Univ Sapporo Hokkaido Japan 0608628 kaido 0608628, Japan
Citazione:
Y.G. Xie et al., "A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance", IEEE ELEC D, 22(7), 2001, pp. 312-314

Abstract

A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT (IG-PHEMT) utilizing a silicon interface control layer (Si ICL) was successfully fabricated and its DC and RF performances were characterized. The device showed high transconductance of 177 mS/mm even for a gate length of 1.6 mum As compared with the conventional Schottky gate PHEMTs, the gate leakage current was reduced by 4 orders of magnitudes and the gate breakdown voltage was increasedup to 39 V. Well-behaved RF characteristics with the current gain cutoff frequency, f(T), of 9 GHz and the maximum oscillation frequency, f(max), of 38 GHz were obtained for the 1.6 mum-gate-length device.

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Documento generato il 30/03/20 alle ore 10:17:55