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Titolo:
Patterning and switching of nano-size ferroelectric memory cells
Autore:
Alexe, M; Harnagea, C; Visinoiu, A; Pignolet, A; Hesse, D; Gosele, U;
Indirizzi:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 20 Halle, Germany
Titolo Testata:
SCRIPTA MATERIALIA
fascicolo: 8-9, volume: 44, anno: 2001,
pagine: 1175 - 1179
SICI:
1359-6462(20010518)44:8-9<1175:PASONF>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS;
Keywords:
ferroelectricity; piezoelectricity; atomic force microscopy (AFM), self-assembly; nanostructures;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Alexe, M Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Weinberg 2 Halle Germany D-06120
Citazione:
M. Alexe et al., "Patterning and switching of nano-size ferroelectric memory cells", SCR MATER, 44(8-9), 2001, pp. 1175-1179

Abstract

A "top-down" approach using a-beam lithography and a "bottom-up" one usingself-assembly methods were used to fabricate ferroelelectric Pb(Zr,Ti)O-3,SrBi2Ta2O9 and BaTiO3 nanostructures with lateral sizes in the range of 30nm to 100 nm. Switching of single sub-100 nm cells was achieved and piezoelectric hysteresis loops were recorded using a scanning force microscope working in piezoresponse mode. The piezoelectricity and its hysteresis acquired for 100 nm PZT cells demonstrate that a further decrease in lateral sizeunder 100 nm appears to be possible and that the size effects are not fundamentally limiting on increase density of non-volatile ferroelectric memories in the Gbit range. (C) 2001 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

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Documento generato il 05/12/20 alle ore 12:40:50