Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Structural characterisation of amorphised compound semiconductors
Autore:
Ridgway, MC; Glover, CJ; Yu, KM; Foran, GJ; Lee, TW; Moon, Y; Yoon, E;
Indirizzi:
Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT, Australia Australian Natl Univ Canberra ACT Australia gn, Canberra, ACT, Australia Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley Berkeley CA USA 94720 Mat Sci, Berkeley, CA 94720 USA Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia Australian Nucl Sci & Technol Org Menai NSW Australia 2234 234, Australia Seoul Natl Univ, Sch Mat Sci & Engn, Seoul, South Korea Seoul Natl Univ Seoul South Korea ch Mat Sci & Engn, Seoul, South Korea
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 175, anno: 2001,
pagine: 280 - 285
SICI:
0168-583X(200104)175:<280:SCOACS>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISORDER; DEFECTS; EXAFS;
Keywords:
amorphous; implantation; EXAFS; GaAs; InP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Ridgway, MC Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT, Australia Australian Natl Univ Canberra ACT Australia , ACT, Australia
Citazione:
M.C. Ridgway et al., "Structural characterisation of amorphised compound semiconductors", NUCL INST B, 175, 2001, pp. 280-285

Abstract

Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced structural modifications in amorphous GaAs and InP. Relative to crystalline standards, increases in bond length were apparentfor both materials. However, the constituent atoms were under- and over-coordinated in amorphous GaAs and InP, respectively, as consistent with the reported decrease and increase in density, respectively. For GaAs, experimental evidence for the presence of homopolar bonding ill the amorphous phase was apparent though the similarity in atomic number of the two constituentsinhibited a quantitative determination. Tn contrast, homopolar bonding illamorphous InP was readily measurable - In-In bonding comprised similar to 14% of the total In bonds. For amorphous GaAs, all structural parameters were independent of ion dose and implantation temperature as consistent with an intrinsic rather than an implant-specific extrinsic structure. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 02:35:23