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Titolo:
Anomalous damaging behaviour of AlAs during ion implantation at 15 K
Autore:
Wendler, E; Breeger, B; Wesch, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 175, anno: 2001,
pagine: 78 - 82
SICI:
0168-583X(200104)175:<78:ADBOAD>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE-DEPENDENCE; IRRADIATED ALAS; ALXGA1-XAS; AMORPHIZATION; RBS;
Keywords:
ion implantation; AlAs; RBS/channelling; amorphisation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Wendler, E Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 743 Jena, Germany
Citazione:
E. Wendler et al., "Anomalous damaging behaviour of AlAs during ion implantation at 15 K", NUCL INST B, 175, 2001, pp. 78-82

Abstract

AlAs is implanted with 125 keV Na and 660 keV Xe ions at a temperature of 15 K. Defect analysis is done in situ by Rutherford backscattering spectrometry in channelling configuration without temperature change. An ion-beam-induced interfacial amorphisation of AlAs is observed at the interface to the GaAs cap layer, which is related to the energy deposition into collision processes, yielding an amorphisation rate of 0.44 nm/dpa (displacements perlattice atom). Over a wide range of ion fluences only point defects and point defect complexes exist in the implanted layer, pointing to a balance between defect formation and recombination during the irradiation. In this depth region amorphisation occurs if the volume introduced by the implanted ions exceeds some critical value. We assume that this causes the breaking ofbonds in the AlAs lattice and the nucleation of amorphous seeds which growrapidly during further irradiation. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 21/09/20 alle ore 12:08:49