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Titolo:
Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide
Autore:
Weber, WJ; Jiang, W; Thevuthasan, S;
Indirizzi:
Pacific NW Natl Labs, Richland, WA 99352 USA Pacific NW Natl Labs Richland WA USA 99352 l Labs, Richland, WA 99352 USA
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 175, anno: 2001,
pagine: 26 - 30
SICI:
0168-583X(200104)175:<26:ADAATR>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
IRRADIATION-INDUCED AMORPHIZATION; CERAMICS; DAMAGE; BEHAVIOR;
Keywords:
amorphization; irradiation effects; thermal recovery; silicon carbide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Weber, WJ Pacific NW Natl Labs, MSIN K8-93,POB 999, Richland, WA 99352 USAPacific NW Natl Labs MSIN K8-93,POB 999 Richland WA USA 99352 SA
Citazione:
W.J. Weber et al., "Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide", NUCL INST B, 175, 2001, pp. 26-30

Abstract

Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2-) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases withdecreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energiesfor thermal recovery on the Si sublattice are estimated to be 0.3 +/- 0.15eV (Stage I), 1.3 +/- 0.25 eV (Stage II) and 1.5 +/- 0.3 eV (Stage III). (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 22/01/20 alle ore 06:48:23