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Titolo:
Implantation-induced disorder in amorphous Ge: Production and relaxation
Autore:
Ridgway, MC; Glover, CJ; Desnica-Frankovic, ID; Furic, K; Yu, KM; Foran, GJ; Clerc, C; Hansen, JL; Larsen, AN;
Indirizzi:
Australian Natl Univ, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 rra, ACT 0200, Australia Rudjer Boskovic Inst, Dept Phys, Zagreb, Croatia Rudjer Boskovic Inst Zagreb Croatia ic Inst, Dept Phys, Zagreb, Croatia Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA USA Lawrence Berkeley Lab Berkeley CA USA Lab, Div Mat Sci, Berkeley, CA USA Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia Australian Nucl Sci & Technol Org Menai NSW Australia 2234 234, Australia CNRS, F-91405 Orsay, France CNRS Orsay France F-91405CNRS, F-91405 Orsay, France Aarhus Univ, Inst Phys & Astron, Aarhus, Denmark Aarhus Univ Aarhus Denmark us Univ, Inst Phys & Astron, Aarhus, Denmark
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 175, anno: 2001,
pagine: 21 - 25
SICI:
0168-583X(200104)175:<21:IDIAGP>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-DYNAMICS SIMULATION; GERMANIUM; DAMAGE;
Keywords:
amorphous; implantation; EXAFS; Raman; Ge;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Ridgway, MC Australian Natl Univ, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 0, Australia
Citazione:
M.C. Ridgway et al., "Implantation-induced disorder in amorphous Ge: Production and relaxation", NUCL INST B, 175, 2001, pp. 21-25

Abstract

Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implantation-induced micro-structural modifications in amorphous Ge including increases in bond length, broadening of the bondangle distribution, and non-Gaussian static disorder as functions of ion dose. The resulting evolution of the interatomic distance distribution, over an ion dose range extending two orders of magnitude beyond that required for amorphisation, demonstrates the influence of implant conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects in the amorphous phase. In contrast, a common, ion-dose-independent structure is apparent following low-temperature, thermally-induced relaxation as consistent with the annealing of point defects in the amorphous phase. Structural relaxation is manifested by reductions in both bond-length and bond-angle distortion and the relaxation enthalpy for each component has been calculated separately. (C) 2001 Elsevier Science B,V. All rights reserved.

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Documento generato il 28/09/20 alle ore 11:29:58