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Titolo:
Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage
Autore:
Lee, JH; Lee, MB; Hahm, SH; Choi, HC; Lee, JH; Lee, JH; Kim, JS; Choi, KM; Choi, CA;
Indirizzi:
Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea Kyungpook Natl Univ Taegu South Korea 702701 , Taegu 702701, South Korea Inje Univ, Sch Elect & Telecommun Engn, Kimhae 621749, South Korea Inje Univ Kimhae South Korea 621749 mun Engn, Kimhae 621749, South Korea Kwandong Univ, Res Inst Elect & Telecommun Technol, Kangwon 215800, South Korea Kwandong Univ Kangwon South Korea 215800 ol, Kangwon 215800, South Korea Elect & Telecommun Res Inst, Taejon 305600, South Korea Elect & TelecommunRes Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 3, volume: 19, anno: 2001,
pagine: 1055 - 1058
SICI:
1071-1023(200105/06)19:3<1055:FALPEW>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
VACUUM MICROELECTRONICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, JH Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea Kyungpook Natl Univ Taegu South Korea 702701 702701, South Korea
Citazione:
J.H. Lee et al., "Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage", J VAC SCI B, 19(3), 2001, pp. 1055-1058

Abstract

A lateral-type poly-Si field emission device was fabricated by utilizing the local oxidation of silicon (LOGOS) process and a simple and efficient activation technique of the tip end was proposed to achieve a high emission current. The fabricated single field emitter exhibits excellent electrical characteristics such as a very low turn-on voltage of 2 V and an extremely high current of similar to 500 muA at anode to cathode voltage of 30 V. These superior field emission characteristics are believed to be due to both anincreased enhancement factor (beta) by appropriate activation and originally sharpened tip by the LOGOS process. (C) 2001 American Vacuum Society.

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Documento generato il 23/09/20 alle ore 04:28:20