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Titolo:
Patterning technology of carbon nanotubes for field emission displays
Autore:
Cho, YR; Lee, JH; Song, YH; Kang, SY; Jung, MY; Hwang, CS; Cho, KI;
Indirizzi:
ETRi, Micro Elect Tech Lab, Yusong Gu, Taejon 305350, South Korea ETRi Taejon South Korea 305350 ab, Yusong Gu, Taejon 305350, South Korea
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 3, volume: 19, anno: 2001,
pagine: 1012 - 1015
SICI:
1071-1023(200105/06)19:3<1012:PTOCNF>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
EMITTERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Cho, YR ETRi, Micro Elect Tech Lab, Yusong Gu, 161 Kajong Dong, Taejon 305350, South Korea ETRi 161 Kajong Dong Taejon South Korea 305350 05350, South Korea
Citazione:
Y.R. Cho et al., "Patterning technology of carbon nanotubes for field emission displays", J VAC SCI B, 19(3), 2001, pp. 1012-1015

Abstract

Patterning technology of fine carbon nanotube (CNT) pixels on a hard metalhas been developed by using photolithography process for field emission displays (FEDs). The photolithography method produced much sharper and smaller CNT pixels compared with those made by the conventional screen-printing process. The CNTs in the patterned pixels by photolithography were uniformlydistributed in a 2 in. diagonal area. The density of CNT bundles in the patterned pixels was about 10/mum(2). After patterning and heat treatment process below 300 degreesC, most of CNT bundles on the cathode were aligned perpendicular to the substrate. The turn-on field of patterned CNTs was less than 4.2 V/mum and the current density was about 2.1 mA/cm(2) at 6 V/mum. This process might be applicable to field emitter arrays for high resolutionFEDs. (C) 2001 American Vacuum Society.

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Documento generato il 19/09/20 alle ore 21:41:47