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Titolo:
Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation
Autore:
Lee, JH; Feng, WS; Juang, TC; Chang-Liao, KS;
Indirizzi:
Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan Natl Tsing Hua Univ Hsinchu Taiwan 30013 Syst Sci, Hsinchu 30013, Taiwan Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan Chang Gung Univ Tao Yuan Taiwan Univ, Dept Elect Engn, Tao Yuan, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan Natl Taiwan Univ Taipei Taiwan 10764 pt Elect Engn, Taipei 10764, Taiwan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 3, volume: 19, anno: 2001,
pagine: 794 - 799
SICI:
1071-1023(200105/06)19:3<794:EPIABP>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
NITROGEN CONCENTRATION; RADIATION HARDNESS; SILICON DIOXIDE; P-MOSFETS; N2O; RELIABILITY; PROFILE; OXYGEN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Chang-Liao, KS Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan Natl Tsing Hua Univ Hsinchu Taiwan 30013 hu 30013, Taiwan
Citazione:
J.H. Lee et al., "Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation", J VAC SCI B, 19(3), 2001, pp. 794-799

Abstract

The improvement of electric property;and reduction of boron penetration inmetal-oxide-Si (MOS) capacitors are deafly achieved by the combination of a gate electrode deposited using amorphous Si(a-Si) and a gate oxynitride formed by a two-step N2O nitridation. The charge-to-breakdown performance ofMOS capacitors fabricated by this technique is excellent. The hot-electroninduced interface traps and flatband voltage shifts are significantly reduced. This reliability improvement can be explained in terms of a mechanism based on an increase in compressive stress (macroscopic strain) in the oxynitride and relaxation of SiO2/Si interfacial strain. Also this improvement can be due to a reduction of hydrogen-related species diffused from the rate electrode, which is achieved by nitrogen pileup at the gate electrode/oxynitride interface. Boron penetration is significantly suppressed by an a-Sigate electrode because of a larger grain size and a longer dopant diffusion path. The boron penetration is also clearly reduced by a gate oxynitride formed using a two-step N2O nitridation. Boron penetration reduction for this oxynitride can be attributed to the nitrogen incorporation into the gateelectrode/oxynitride interface. This approach would be useful for the processes of gate electrode and gate dielectric in the deep submicron MOS transistors. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 13:39:32