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Titolo:
Strain-energy-driven abnormal grain growth in copper films on silicon substrates
Autore:
Zhang, JM; Xu, KW; Ji, V;
Indirizzi:
Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shannxi, Peoples R China Shaanxi Normal Univ Xian Shannxi Peoples R China 710062 , Peoples R China Xian Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China Xian Jiao Tong Univ Xian Peoples R China 710049 710049, Peoples R China ENSAM, LM3 ESA CNRS 8006, F-75013 Paris, France ENSAM Paris France F-75013 SAM, LM3 ESA CNRS 8006, F-75013 Paris, France
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1, volume: 226, anno: 2001,
pagine: 168 - 174
SICI:
0022-0248(200106)226:1<168:SAGGIC>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; ORIENTATION;
Keywords:
recrystallization; x-ray diffraction; physical vapor deposition processes; metals;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, JM Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shannxi, Peoples R China Shaanxi Normal Univ Xian Shannxi Peoples R China 710062 R China
Citazione:
J.M. Zhang et al., "Strain-energy-driven abnormal grain growth in copper films on silicon substrates", J CRYST GR, 226(1), 2001, pp. 168-174

Abstract

Abnormal grain growth in thin Cu films on Si substrates has been investigated as a function of annealing time. Abnormal grains with(1 1 0) orientation were observed by transmission electron microscopy. X-ray diffraction patterns showed that the films which underwent extensive abnormal grain growth also underwent a change in texture from (1 1 1) to (1 0 0), (1 1 0) and (3 1 1). A simple theoretical analysis showed that these were the results of astrain-energy-driven abnormal grain growth process. (C) 2001 Published by Elsevier Science B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 20:28:54