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Titolo:
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
Autore:
Shealy, JB; Smart, JA; Shealy, JR;
Indirizzi:
RF Nitro Commun Inc, Charlotte, NC 28269 USA RF Nitro Commun Inc Charlotte NC USA 28269 n Inc, Charlotte, NC 28269 USA
Titolo Testata:
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
fascicolo: 6, volume: 11, anno: 2001,
pagine: 244 - 245
SICI:
1531-1309(200106)11:6<244:LNAFVC>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Keywords:
gallium nitride; oscillator; solid state;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Shealy, JB RF Nitro Commun Inc, Charlotte, NC 28269 USA RF Nitro Commun Inc Charlotte NC USA 28269 lotte, NC 28269 USA
Citazione:
J.B. Shealy et al., "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)", IEEE MICR W, 11(6), 2001, pp. 244-245

Abstract

The first report of AlGaN/GaN HEMT-based voltage controlled oscillators (VCOs) is presented. Varactor-tuned oscillators implemented using distributednetworks oscillate at 6 GHz with high output power (0.5 W), low-phase noise (-92 dBc/Hz SSB noise at 100 KHz offset), and high-tuning bandwidth (10%), The measured phase noise of AlGaN/GaN FETs is compared to the phase noiseof GaAs FET and GaAs HBTs at 6 GHz, indicating the AlGaN/GaN FET exhibits equivalent SSB noise to GaAs FETs. These results indicate high power AlGaN/GaN-based VCOs may be used to simplify the line up in a communication radio, while improving the overall efficiency of the radio.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 19:51:22