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Titolo:
Primary damage states produced by Si and Au recoils in SiC: A molecular dynamics and experimental investigation - art. no. 214106
Autore:
Gao, F; Weber, WJ; Jiang, W;
Indirizzi:
Battelle Mem Inst, Pacific NW Natl Labs, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 Natl Labs, Richland, WA 99352 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 21, volume: 6321, anno: 2001,
pagine: 4106 -
SICI:
0163-1829(20010601)6321:21<4106:PDSPBS>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
IRRADIATION-INDUCED AMORPHIZATION; SILICON-CARBIDE; INDUCED CRYSTALLINE; DEFECT PRODUCTION; DISPLACEMENT CASCADES; AMORPHOUS TRANSITION; SINGLE-CRYSTALS; CERAMICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
28
Recensione:
Indirizzi per estratti:
Indirizzo: Gao, F Battelle Mem Inst, Pacific NW Natl Labs, MSIN K8-93,POB 999, Richland, WA 99352 USA Battelle Mem Inst MSIN K8-93,POB 999 Richland WA USA 993529352 USA
Citazione:
F. Gao et al., "Primary damage states produced by Si and Au recoils in SiC: A molecular dynamics and experimental investigation - art. no. 214106", PHYS REV B, 6321(21), 2001, pp. 4106

Abstract

Molecular dynamics (MD) simulations, experimental studies, and a theoretical model have been combined in an investigation of the disordering and amorphization processes in SiC irradiated with Si and Au ions. In MD simulations, large disordered domains, consisting of interstitials and antisite defects, are created in the cascades produced by Au primary knock-on atoms (PKAs); whereas Si PKAs generate only small interstitial clusters, with most defects being single interstitials and vacancies distributed over a large region. The data for a cluster spectrum obtained from MD simulations have been used to calculate the relative cross sections for in-cascade amorphization (or clustering) sigma (DI) and in-cascade defect-stimulated amorphization sigma (DS). The ratio of these-cross sections, sigma (DS)/sigma (DI), for Siand Au is in excellent agreement with those derived from the experimental data based on a fit of the direct-impact-defect-stimulated model. This suggests that the observed higher disordering rate and the residual disorder after thermal annealing at 300 K for irradiation with Au2+ are associated with a higher probability for in-cascade amorphization or large disordered cluster formation. The observed different behavior for the accumulation and recovery of disorder in SiC irradiated by Si+ and Au2+ is qualitatively consistent with the present MD simulations and the direct-impact-defect-stimulated model.

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Documento generato il 24/01/20 alle ore 15:20:25