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Titolo:
Non-monotonous behavior of in-doped GaN grown by MOVPE with nitrogen carrier gas
Autore:
Yamamoto, A; Tanikawa, T; Ikuta, K; Adachi, M; Hashimoto, A; Ito, Y;
Indirizzi:
Fukui Univ, Dept Elect Engn & Elect, Fukui 9108507, Japan Fukui Univ Fukui Japan 9108507 Elect Engn & Elect, Fukui 9108507, Japan Wakasa Wan Energy Res Ctr, Fukui 9100192, Japan Wakasa Wan Energy Res CtrFukui Japan 9100192 Ctr, Fukui 9100192, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 228, anno: 2001,
pagine: 239 - 242
SICI:
0370-1972(200111)228:1<239:NBOIGG>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-PHASE EPITAXY; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Yamamoto, A Fukui Univ, Dept Elect Engn & Elect, 3-9-1 Bunkyo, Fukui 9108507, Japan Fukui Univ 3-9-1 Bunkyo Fukui Japan 9108507 ui 9108507, Japan
Citazione:
A. Yamamoto et al., "Non-monotonous behavior of in-doped GaN grown by MOVPE with nitrogen carrier gas", PHYS ST S-B, 228(1), 2001, pp. 239-242

Abstract

This paper reports the In-doping effects in MOVPE grown GaN using a N-2 carrier gas. Electrical and optical properties of the In-doped GaN are found to show non-monotonous behavior. when the In source (TMI) supply is increased. Carrier concentration in the In-doped GaN is monotonously decreased with increasing TMI supply, while Hall mobility and PL intensity ratio betweenexciton emission and yellow deep emission (I-EX/I-YL) are decreased in theregion of low TMI supply (TMI/TEG <0.5). In this region, tensile stress inthe grown GaN estimated from the exciton emission peak energy is also increased with increasing TMI/TEG ratio. For TMI/TEG ratio in the range of 0.5-1.5. on the other hand, they show very normal behavior (improvement by In doping). Such anomalous behavior for mobility, I-EX/I-YL and tensile stress is discussed from the viewpoints of impurity hardening of GaN, as well as stress relaxation by both crack formation and In doping.

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Documento generato il 21/10/20 alle ore 10:42:09