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Titolo:
Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures
Autore:
Kaneta, A; Marutsuki, G; Okamoto, K; Kawakami, Y; Nakagawa, Y; Shinomiya, G; Mukai, T; Fujita, S;
Indirizzi:
Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan Kyoto Univ KyotoJapan 6068501 pt Elect Sci & Engn, Kyoto 6068501, Japan Nichia Corp, Nitride Semicond Lab, Tokushima 7748601, Japan Nichia Corp Tokushima Japan 7748601 micond Lab, Tokushima 7748601, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 228, anno: 2001,
pagine: 153 - 156
SICI:
0370-1972(200111)228:1<153:SIOPII>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
FIELD OPTICAL MICROSCOPY; SPECTROSCOPY; LAYER; DOTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Kaneta, A Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan Kyoto Univ Kyoto Japan 6068501 ci & Engn, Kyoto 6068501, Japan
Citazione:
A. Kaneta et al., "Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures", PHYS ST S-B, 228(1), 2001, pp. 153-156

Abstract

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensityin PL spectra according to the probing location with the scale less than afew hundreds nm.

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Documento generato il 09/04/20 alle ore 00:27:46