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Titolo:
Local structure analysis of Ga1-xInxN alloy using extended X-ray absorption fine structure measurements
Autore:
Miyajima, T; Kudo, Y; Liu, KY; Uruga, T; Asatsuma, T; Hino, T; Kobayashi, T;
Indirizzi:
Sony Corp, Core Technol & Network Co, Core Technol Dev Ctr, Atsugi, Kanagawa 2430014, Japan Sony Corp Atsugi Kanagawa Japan 2430014 , Atsugi, Kanagawa 2430014, Japan Sony Corp, Environm & Anal Tech Dept, Atsugi, Kanagawa 2430021, Japan SonyCorp Atsugi Kanagawa Japan 2430021 , Atsugi, Kanagawa 2430021, Japan Sony Shiroishi Semicond Inc, Shiroishi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc Shiroishi Miyagi Japan 9890734 9890734, Japan Japan Synchrotron Radiat Res Inst, Mikazukicho, Hyogo 6795198, Japan JapanSynchrotron Radiat Res Inst Mikazukicho Hyogo Japan 6795198 , Japan
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 228, anno: 2001,
pagine: 45 - 48
SICI:
0370-1972(200111)228:1<45:LSAOGA>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROUP-III-NITRIDES; INGAN; WURTZITE; DIODES; EXAFS; NM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Miyajima, T Sony Corp, Core Technol & Network Co, Core Technol Dev Ctr, 4-14-1 Asahicho, Atsugi, Kanagawa 2430014, Japan Sony Corp 4-14-1 Asahicho Atsugi Kanagawa Japan 2430014 Japan
Citazione:
T. Miyajima et al., "Local structure analysis of Ga1-xInxN alloy using extended X-ray absorption fine structure measurements", PHYS ST S-B, 228(1), 2001, pp. 45-48

Abstract

We investigated the local atomic structure around In atoms of MOCVD-grown Ga1-xInxN alloy (0.01 less than or equal to x less than or equal to 0.21) using extended X-ray absorption fine structure (EXAFS) measurements of the In K-edge. For x less than or equal to 0.16, the In-Ga and In-In atomic distances were constant at 3.22-3.30 Angstrom and 3.25-3.30 Angstrom. respectively, and close to the Ga-Ga atomic distance in the ideal wurtzite GaN. On the other hand, the In-N bond length was constant at 1.85-2.21 Angstrom, which is close to that in the ideal wurtzite InN. These results suggest that the internal strain of the Ga1-xInxN alloy is relaxed by the bond angle changing of In-N-Ga or In-N-In. The coordination numbers of the second-nearest neighbor In of In were higher than that estimated from random GaInN alloy, in which In atoms randomly occupy the cation sublattice of GaInN alloy. This behavior can be explained by the segregation of In atoms starting even atx 0.01. For x = 0.21, the interatomic distance an the coordination number could not be accurately estimated using our simple model, in which single interatomic distances of In-Ga and In-In were assumed.

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Documento generato il 07/04/20 alle ore 21:28:31