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Titolo:
Electron density distribution in amorphous se determined by reverse Monte Carlo simulation coupled with anomalous X-ray scattering data
Autore:
Saito, M; Waseda, Y;
Indirizzi:
Niigata Univ, Fac Med, Sch Hlth Sci, Niigata 9518518, Japan Niigata Univ Niigata Japan 9518518 Sch Hlth Sci, Niigata 9518518, Japan Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 at, Sendai, Miyagi 9808577, Japan
Titolo Testata:
MATERIALS TRANSACTIONS
fascicolo: 10, volume: 42, anno: 2001,
pagine: 2071 - 2074
SICI:
1345-9678(200110)42:10<2071:EDDIAS>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
LIQUIDS;
Keywords:
electron density distribution; reverse Monte Carlo simulation; anomalous X-ray scattering; ion-electron structure factor; amorphous selenium;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Saito, M Niigata Univ, Fac Med, Sch Hlth Sci, Niigata 9518518, Japan Niigata Univ Niigata Japan 9518518 Sci, Niigata 9518518, Japan
Citazione:
M. Saito e Y. Waseda, "Electron density distribution in amorphous se determined by reverse Monte Carlo simulation coupled with anomalous X-ray scattering data", MATER TRANS, 42(10), 2001, pp. 2071-2074

Abstract

The ion-electron structure factor estimated from the anomalous X-ray scattering measurements near the Se K absorption edge has been used in the reverse Monte Carlo (RMC) simulation for determining the valence electron density distribution in amorphous Se. The results clearly indicate that the origin of particular valence electron distribution for Se can be explained by two non-bonding electrons and two bonding electrons.

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Documento generato il 04/04/20 alle ore 03:02:41