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Titolo:
Influence of TiO2/Sb2O3 ratio on ZnO varistor ceramics
Autore:
Zhang, CC; Hu, YX; Lu, WZ; Cao, MH; Zhou, DX;
Indirizzi:
Huazhong Univ Sci & Technol, Dept Solid State Elect, Wuhan 430074, PeoplesR China Huazhong Univ Sci & Technol Wuhan Peoples R China 430074 PeoplesR China
Titolo Testata:
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
fascicolo: 1, volume: 22, anno: 2002,
pagine: 61 - 65
SICI:
0955-2219(200201)22:1<61:IOTROZ>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
CURRENT-VOLTAGE CHARACTERISTICS; ZINC-OXIDE; GRAIN-GROWTH; NONLINEARITY; BEHAVIOR;
Keywords:
ceramics; degradation; grain-boundary; varistors; ZnO;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, CC Huazhong Univ Sci & Technol, Dept Solid State Elect, Wuhan 430074, PeoplesR China Huazhong Univ Sci & Technol Wuhan Peoples R China 430074 China
Citazione:
C.C. Zhang et al., "Influence of TiO2/Sb2O3 ratio on ZnO varistor ceramics", J EUR CERAM, 22(1), 2002, pp. 61-65

Abstract

The influence of TiO2/Sb2O3 (Ti/Sb) ratio on the microstructure development and electrical properties of varistor ceramics in ZnO-(Bi2O3-TiO2-Sb2O3)-CoO-MnO2 system was investigated. Characterization of varistors was performed by XRD, SEM, d.c. degradation behavior, and electrical measurements. It is found that the Ti/Sb ratio greatly influences the microstructure and electrical properties of the ZnO varistor. The specimen with Ti/Sb ratio of 5 has the lowest breakdown field (20V/mm) and improved d.c. degradation behavior. (C) 2001 Elsevier Science Ltd. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 22:25:24