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Titolo:
Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers
Autore:
Guo, Y; Wang, B; Gu, BL; Kawazoe, Y;
Indirizzi:
Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China Tsing Hua UnivBeijing Peoples R China 100084 ng 100084, Peoples R China Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 es, Sendai, Miyagi 9808577, Japan
Titolo Testata:
EUROPEAN PHYSICAL JOURNAL B
fascicolo: 4, volume: 23, anno: 2001,
pagine: 509 - 513
SICI:
1434-6028(200111)23:4<509:AASOST>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
APPLIED ELECTRIC-FIELD; SEMICONDUCTOR HETEROSTRUCTURE; INJECTION; BARRIER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Guo, Y Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China Tsing Hua Univ Beijing Peoples R China 100084 84, Peoples R China
Citazione:
Y. Guo et al., "Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers", EUR PHY J B, 23(4), 2001, pp. 509-513

Abstract

We investigate characteristics of spin tunneling time in ZuSe/Ze(1-x)MnSe multilayers under the influence of both an electric field and a magnetic field. The results indicate that the tunneling time shows complicated oscillations and significant spin separation for electrons with different spin orientations traversing semimagnetic semiconductor heterostructures. It is also shown that the tunneling time exhibits obvious asymmetry in opposite tunneling directions for electrons tunneling through asymmetric heterostructures, which mainly occurs in resonant regions. The degree of the asymmetry of the tunneling time is not only spin-polarization dependent but also external-field induced.

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Documento generato il 10/04/20 alle ore 15:39:54