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Titolo:
Scanning tunneling microscopy of endohedral metallofullerene Tb@C-82 on C-60 film and Si(100) 2 x 1 surface
Autore:
Shi, BR; Wang, XS; Huang, HJ; Yang, SH; Heiland, W; Cue, N;
Indirizzi:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Kowloon Hong Kong Peoples R China s R China Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Kowloon Hong Kong Peoples R China s R China Shandong Univ, Dept Phys, Jinan 250100, Peoples R China Shandong Univ Jinan Peoples R China 250100 Jinan 250100, Peoples R China Univ Osnabruck, FB Phys, D-49069 Osnabruck, Germany Univ Osnabruck Osnabruck Germany D-49069 hys, D-49069 Osnabruck, Germany
Titolo Testata:
JOURNAL OF PHYSICAL CHEMISTRY B
fascicolo: 46, volume: 105, anno: 2001,
pagine: 11414 - 11418
SICI:
1520-6106(20011122)105:46<11414:STMOEM>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELUTION BEHAVIOR; AMORPHOUS-CARBON; FULLERENES; COMPLEXES; Y-AT-C-82; CLUSTERS; STM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Shi, BR Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Kowloon Hong Kong Peoples R Chinaa
Citazione:
B.R. Shi et al., "Scanning tunneling microscopy of endohedral metallofullerene Tb@C-82 on C-60 film and Si(100) 2 x 1 surface", J PHYS CH B, 105(46), 2001, pp. 11414-11418

Abstract

Endohedral metallofullerene Tb@C-82 molecules adsorbed on the C-60 film and Si(100) 2 x 1 have been investigated by scanning tunneling microscopy (STM). The C-60 film was obtained by depositing 2-3 monolayers (ML) of C-60 molecules on a highly oriented pyrolytic graphite (HOPG) surface. Tb@C-82 molecules have great mobility and aggregate along the edges of terraces on theC-60 film, and form a close-packing monolayer with increasing coverage. Very few trimers or dimers were imaged on the surface of C-60 film. In contrast, the Tb@C82 Molecules were randomly distributed on the surface of Si(100). These nucleation behaviors of Tb@C-82 molecules can be explained by the interaction of Tb@C-82-Si and Tb@C-82-Tb@C-82 that were brought on by the permanent dipole moment of Tb@C-82 Molecules.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 12:54:31