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Titolo:
Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF
Autore:
Palermo, V; Jones, D;
Indirizzi:
ICOCEA, CNR, Area Ric Bologna, I-40129 Bologna, Italy ICOCEA Bologna Italy I-40129 R, Area Ric Bologna, I-40129 Bologna, Italy
Titolo Testata:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
fascicolo: 5, volume: 4, anno: 2001,
pagine: 437 - 441
SICI:
1369-8001(200110)4:5<437:MCOTS[>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGEN TERMINATION; SI(111) SURFACES; SILICON; MICROSCOPY; ROUGHNESS; SI(100); OXIDATION; SCALE;
Keywords:
silicon; HF; STM; etching;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Palermo, V ICOCEA, CNR, Area Ric Bologna, Via Piero Gobetti 101, I-40129 Bologna, Italy ICOCEA Via Piero Gobetti 101 Bologna Italy I-40129 ogna, Italy
Citazione:
V. Palermo e D. Jones, "Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF", MAT SC S PR, 4(5), 2001, pp. 437-441

Abstract

Micromorphological characteristics of the commercially important Si [100] surface have been quantified by mathematical treatment of STM data. Comparisons are made between samples subjected to different HF etching conditions by analyzing the power spectra obtained from the Fourier transform of the image data. Results provide numerical data for the correlation of STM imageswith measurements necessary for subsequent production processes. (C) 2001 Elsevier Science Ltd. All rights reserved.

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Documento generato il 03/04/20 alle ore 04:33:23