Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode
Autore:
Singh, R; Arora, SK; Kanjilal, D;
Indirizzi:
Ctr Nucl Sci, New Delhi 110067, India Ctr Nucl Sci New Delhi India 110067 tr Nucl Sci, New Delhi 110067, India
Titolo Testata:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
fascicolo: 5, volume: 4, anno: 2001,
pagine: 425 - 432
SICI:
1369-8001(200110)4:5<425:SHIIIM>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEFECT PRODUCTION; INTERFACE STATES; INDUCED DAMAGE; IMPLANTED SI; SILICON; TRANSPORT; LAYERS;
Keywords:
swift heavy ion irradiation; Schottky barrier diode; C-V measurement; I-V measurement; interface state density; electronic and nuclear energy loss;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Singh, R Ctr Nucl Sci, Aruna Asaf Ali Rd, New Delhi 110067, India Ctr NuclSci Aruna Asaf Ali Rd New Delhi India 110067 067, India
Citazione:
R. Singh et al., "Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode", MAT SC S PR, 4(5), 2001, pp. 425-432

Abstract

Modification in the electrical transport properties of Au/n-Si(111) Schottky barrier diode (SBD) by swift heavy ion (SHI) irradiation has been investigated using in situ capacitance-voltage (C-V) and current-voltage (I-V) measurements at various irradiation fluences ranging from 1 x 10(12) to 1 x 10(13) ions cm(-2). The variations in various parameters of the Schottky diode have been systematically studied as a function of fluence during irradiation. The ionized-donor concentration decreases with the increase in fluence, while the ideality factor, reverse saturation current and reverse leakage current increases with fluence. The change in these parameters is explained in the light of basic energy loss mechanisms of the SHI at the metal-semiconductor (MS) interface. The Schottky barrier height (SBH) decreases froma value of 0.83eV for the unirradiated diode to 0.66eV for the diode irradiated with a fluence of 1 x 10(12) ions cm(-2). After this fluence the SBH remains almost constant up to a fluence of 1 x 10(13) ions cm(-2). The reduction in SBH is caused by an increase in interface state density at the MS interface induced by SHI irradiation. The role of electronic energy loss inmodification of interface states has been envisaged in relation to the immunity of SBH over a wide fluence range after an initial fluence of 1 x 10(12) ions cm(-2). (C) 2001 Elsevier Science Ltd. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 21:54:43