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Titolo:
Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing
Autore:
Fortunato, G; Mariucci, L; Stanizzi, M; Privitera, V; Spinella, C; Coffa, S; Napolitani, E;
Indirizzi:
CNR, IMETEM, I-95121 Catania, Italy CNR Catania Italy I-95121CNR, IMETEM, I-95121 Catania, Italy CNR, IESS, Rome, Italy CNR Rome ItalyCNR, IESS, Rome, Italy INFM, I-35131 Padua, Italy INFM Padua Italy I-35131INFM, I-35131 Padua, Italy Univ Padua, Dipartimento Fis, I-35131 Padua, Italy Univ Padua Padua Italy I-35131 a, Dipartimento Fis, I-35131 Padua, Italy
Titolo Testata:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
fascicolo: 5, volume: 4, anno: 2001,
pagine: 417 - 423
SICI:
1369-8001(200110)4:5<417:FOUJWH>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-IMPLANTATION; SILICON; BORON; DIFFUSION; IRRADIATION; TEMPERATURE;
Keywords:
shallow junctions; excimer laser annealing; ion implantation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Privitera, V CNR, IMETEM, Strada Primosole 50, I-95121 Catania, Italy CNR Strada Primosole 50 Catania Italy I-95121 Catania, Italy
Citazione:
G. Fortunato et al., "Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing", MAT SC S PR, 4(5), 2001, pp. 417-423

Abstract

The combination of BF2 ion implantation and excimer laser annealing has been used to fabricate ultra-shallow junctions, with depths below 100 nm and high electrical activation. Secondary ion mass spectrometry and spreading resistance profiling analysis have been performed to investigate B atomic transport and electrical activation in these samples. The structural analysisof the material irradiated by excimer laser and of the corresponding samples annealed by conventional methods, was carried out by Transmission Electron Microscopy. The latter technique enabled us to detect the presence of microcavities, induced by the implanted fluorine, which are detrimental with respect to the electrical activation issue. We have found that the use of ion implantation and excimer laser annealing results in ultrashallow junctions with an electrically active peak concentration higher than the levels normally achieved by conventional annealing cycles. (C) 2001 Elsevier ScienceLtd. All rights reserved.

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Documento generato il 04/04/20 alle ore 15:34:24