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Titolo:
INVESTIGATION OF THRESHOLD TRANSITION IN SEMICONDUCTOR-LASERS
Autore:
TOFFANO Z;
Indirizzi:
ECOLE SUPER ELECT,SERV RADIO F-91192 GIF SUR YVETTE FRANCE
Titolo Testata:
IEEE journal of selected topics in quantum electronics
fascicolo: 2, volume: 3, anno: 1997,
pagine: 485 - 490
SICI:
1077-260X(1997)3:2<485:IOTTIS>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
LINEWIDTH; PHASE; NOISE;
Keywords:
LASER NOISE; LASER MEASUREMENT APPLICATIONS; OPTICAL SPECTROSCOPY; SEMICONDUCTOR LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
Z. Toffano, "INVESTIGATION OF THRESHOLD TRANSITION IN SEMICONDUCTOR-LASERS", IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 485-490

Abstract

Semiconductor laser threshold transition is investigated by high precision power and linewidth measurements giving specific behavior of linewidth at threshold depending on linewidth enhancement a factor. An analytical model based on Fokker-Planck equation resolution is proposed for extraction of major laser parameters by fitting simultaneously below and above threshold behaviors, Parameters are extracted for two single-mode semiconductor lasers with different detunings, Comparison with a threshold adapted rate equation model shows identical asymptotic behavior (Schawlow-Townes) for both models but simpler calculations andhigher precision at threshold are obtained with the Fokker-Planck method, Detailed investigation of laser phase transition can profit microcavity and surface-emitting laser development by giving unique insighton spontaneous emission evolution and precise noise models.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/11/20 alle ore 09:00:43