Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Electrochemical behavior of As on silver single crystals and experimental conditions for InAs growth by ECALE
Autore:
Innocenti, M; Forni, F; Pezzatini, G; Raiteri, R; Loglio, F; Foresti, ML;
Indirizzi:
Univ Florence, Dept Chem, I-50121 Florence, Italy Univ Florence FlorenceItaly I-50121 Dept Chem, I-50121 Florence, Italy Univ Genoa, Dept Biophys & Elect Engn, I-16145 Genoa, Italy Univ Genoa Genoa Italy I-16145 iophys & Elect Engn, I-16145 Genoa, Italy
Titolo Testata:
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
fascicolo: 1-2, volume: 514, anno: 2001,
pagine: 75 - 82
Fonte:
ISI
Lingua:
ENG
Soggetto:
ATOMIC LAYER EPITAXY; GAAS DEPOSITION; PH3 TREATMENT; ELECTRODEPOSITION; AG(111); FILMS; GOLD; CDTE;
Keywords:
silver single crystals; ECALE; GaAs; thin films; compound semiconductors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Foresti, ML Univ Florence, Dept Chem, Via G Capponi 9, I-50121 Florence, Italy Univ Florence Via G Capponi 9 Florence Italy I-50121 e, Italy
Citazione:
M. Innocenti et al., "Electrochemical behavior of As on silver single crystals and experimental conditions for InAs growth by ECALE", J ELEC CHEM, 514(1-2), 2001, pp. 75-82

Abstract

Different experimental conditions for InAs growth by ECALE were examined. In layers were constantly deposited at underpotential from acetic buffer solutions, whereas As layers were obtained by three different approaches. First, As-upd layers were obtained by reducing an excess of previously deposited As(0) to AsH3 from NaOH solutions obtaining no more than five layers of InAs. Secondly, As was deposited at underpotential from ammonia buffer solutions of pH 9.6; at this pH the upd of both In and As coincide. However, XPS analysis on a sample revealed that only a low percentage, 25%, of As was in the reduced - III state, whereas most of it was in the oxidized + III state. The incomplete charge transfer in AsO2- reduction excludes the possibility of InAs formation. The effective way of depositing InAs on Ag(111) consists in depositing bulk As(0), limiting the extent of deposition through the control of the time as well as the potential of deposition. Thus. As layers were obtained from acetic buffer solutions at -0.7 V. The composition of samples prepared by this procedure was determined by XPS and by the classical methods of analysis. Both methods gave the 1:1 stoichiometric ratio, typical of a compound, though the extent of deposition seems to be low. However, the AFM morphological investigation of samples obtained with 50, 75 and 100 deposition cycles point to a high quality compound. (C) 2001 ElsevierScience B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 11:12:32