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Titolo:
Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy
Autore:
Song, JD; Ok, YW; Kima, JM; Lee, YT; Seong, TY;
Indirizzi:
Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-2, volume: 183, anno: 2001,
pagine: 33 - 38
SICI:
0169-4332(20011112)183:1-2<33:OOCACT>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
BAND-GAP; SEMICONDUCTOR ALLOYS; PHASE; GA0.5IN0.5P;
Keywords:
ordering; molecular beam epitaxy; GaInP; transmission electron microscopy; reflection high-energy electron diffraction; photoluminescence;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Seong, TY Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712,South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 th Korea
Citazione:
J.D. Song et al., "Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy", APPL SURF S, 183(1-2), 2001, pp. 33-38

Abstract

Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510 degreesC. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1 -1 1) positions, indicating the occurrence of CuPt-B ordering. As the growthtemperature decreases, the superlattice spots move toward 1/2{-1 + delta, 1 - delta, 0} positions, where the value of delta is 0.15, It is further shown that for the layers grown at temperatures in the range 445-490 degreesC, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grownat temperatures in the range 470-510 degreesC undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 05/04/20 alle ore 19:39:10