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Titolo:
Strain dependence and deformation potential of the E-1 and E-1+Delta(1) transitions of ZnTe grown on a GaAs (001) substrate
Autore:
Bahng, JH; Jang, MS; Lee, M; Choi, JC; Park, HL; Kim, KJ; Lee, C;
Indirizzi:
Yonsei Univ, Dept Phys, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 ept Phys, Seoul 120749, South Korea Yonsei Univ, IPAP, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 iv, IPAP, Seoul 120749, South Korea Konkuk Univ, Dept Phys, Seoul 143701, South Korea Konkuk Univ Seoul South Korea 143701 ept Phys, Seoul 143701, South Korea Sunchon Natl Univ, Dept Phys, Sunchon 540742, South Korea Sunchon Natl Univ Sunchon South Korea 540742 Sunchon 540742, South Korea
Titolo Testata:
SOLID STATE COMMUNICATIONS
fascicolo: 9-10, volume: 120, anno: 2001,
pagine: 343 - 346
SICI:
0038-1098(2001)120:9-10<343:SDADPO>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
SPECTROSCOPIC ELLIPSOMETRY; DIELECTRIC FUNCTIONS; PRESSURE-DEPENDENCE; GAP; INAS; INP; LAYERS; GASB; INSB; ZNSE;
Keywords:
semiconductors; thin films; epitaxy; optical properties; light absorption and reflection;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Bahng, JH Yonsei Univ, Dept Phys, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Seoul 120749, South Korea
Citazione:
J.H. Bahng et al., "Strain dependence and deformation potential of the E-1 and E-1+Delta(1) transitions of ZnTe grown on a GaAs (001) substrate", SOL ST COMM, 120(9-10), 2001, pp. 343-346

Abstract

ZnTe epitaxial films grown on GaAs (001) substrates with varying film thicknesses were investigated by spectroscopic ellipsometry (SE). As the epilayer thickness decreases, the interband-transition structures near 3.6 and 4.2 eV due to E-1 and E-1 + Delta (1) edges, respectively. shirt gradually tohigher energies and their energy splitting Delta (1) increases, indicatingthe increase in lattice-misniatch-induced strain with decreasin, film thickness. The exact energies of the E-1 and E-1 + Delta (1) edges are obtainedby a line-shape analysis of numerical second derivative spectra of the dielectric functions. From the strain dependences of the E-1 and E-1 + Delta (1) energies, the deformation potentials (DP), D-1(1) and D-3(3), at the L point of the Brillouin zone (BZ) are estimated. (C) 2001 Published by Elsevier Science Ltd.

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Documento generato il 05/12/20 alle ore 01:05:10