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Titolo:
Study of the uniformity of high resistivity neutron doped silicon wafers for silicon drift detectors
Autore:
Beole, S; Bonvicini, V; Burger, P; Casse, G; Giubellino, P; Idzik, M; Kolojvari, A; Rashevsky, A; Riccati, L; Vacchi, A; Zampa, N;
Indirizzi:
Univ Turin, Dipartimento Fis Sperimentale, Ist Nazl Fis Nucl, I-10125 Turin, Italy Univ Turin Turin Italy I-10125 , Ist Nazl Fis Nucl, I-10125 Turin, Italy Univ Trieste, Dipartimento Fis, Ist Nazl Fis Nucl, Trieste, Italy Univ Trieste Trieste Italy mento Fis, Ist Nazl Fis Nucl, Trieste, Italy Canberra Semicond NV, B-2250 Olen, Belgium Canberra Semicond NV Olen Belgium B-2250 micond NV, B-2250 Olen, Belgium Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England Univ Liverpool Liverpool Merseyside England L69 3BX , Merseyside, England Acad Min & Met, Fac Phys & Nucl Tech, Krakow, Poland Acad Min & Met Krakow Poland Met, Fac Phys & Nucl Tech, Krakow, Poland Phys Res Inst St Petersburg, St Petersburg, Russia Phys Res Inst St Petersburg St Petersburg Russia St Petersburg, Russia
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 3, volume: 473, anno: 2001,
pagine: 319 - 325
SICI:
0168-9002(20011111)473:3<319:SOTUOH>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Keywords:
silicon drift detectors; doping homogeneity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Beole, S Univ Turin, Dipartimento Fis Sperimentale, Ist Nazl Fis Nucl, ViaP Guiria1, I-10125 Turin, Italy Univ Turin Via P Guiria 1 Turin Italy I-10125 10125 Turin, Italy
Citazione:
S. Beole et al., "Study of the uniformity of high resistivity neutron doped silicon wafers for silicon drift detectors", NUCL INST A, 473(3), 2001, pp. 319-325

Abstract

The DSI collaboration goal has been the development of large-area silicon drift detectors (SDD) adapted to large-scale production in industry. Such adevelopment is necessary for the use of SDDs in large tracking systems, such as the one proposed for the ALICE experiment at LHC (see Ref. [1]). One of the necessary steps towards large-scale production is the study of the doping uniformity in commercially available Si wafers. We have performed a series of measurements aimed at the evaluation of large-scale fluctuations of doping concentration and of the possible influence on the detector quality induced by processing steps. In this paper, we report final results of both resistivity fluctuations and leakage currents measurements. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 04:09:54