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Titolo:
Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor
Autore:
Kukli, K; Forsgren, K; Ritala, M; Leskela, M; Aarik, J; Harsta, A;
Indirizzi:
Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 12, volume: 148, anno: 2001,
pagine: F227 - F232
SICI:
0013-4651(200112)148:12<F227:DPOZOG>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; THIN-FILMS; ORGANOMETALLIC COMPOUNDS; SILICON; EPITAXY; CAPACITORS; SUBSTRATE; STABILITY; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
39
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hnol, EE-51010 Tartu, Estonia
Citazione:
K. Kukli et al., "Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor", J ELCHEM SO, 148(12), 2001, pp. F227-F232

Abstract

ZrO2 films were grown from ZrI4 and H2O-H2O2 on p-Si(100) substrates usingthe atomic layer deposition technique. The influence of deposition conditions on the dielectric properties of ZrO2 films was investigated. The breakdown field exceeded 2 MV/cm in the films grown at 325-500 degreesC. The relative permittivity measured at 10 kHz was 20-24 in the films deposited at 275-325 degreesC. The dissipation factor of these films was as low as 0.02-0.03. The relative permittivity decreased to 7 and the dissipation factor increased to 0.6 when the growth temperature was raised to 450-500 degreesC. Variation of the measurement frequency from 1 to 100 kHz had only a slight influence on the permittivity values. Hysteresis of the capacitance-voltage curves indicated that a considerable amount of deep levels at the oxide-semiconductor interface and/or in the oxide were recharged under dc bias. The density of rechargeable states increased with the deposition temperature, and the recharging mechanism also depended on the substrate temperature usedfor the ZrO2 growth. (C) 2001 The Electrochemical Society.

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Documento generato il 30/10/20 alle ore 09:50:50