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Titolo:
Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films
Autore:
Abu-Sehly, AA; Abd-Elrahman, MI;
Indirizzi:
Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt Assiut Univ Assiut Egypt 71516 , Fac Sci, Dept Phys, Assiut 71516, Egypt
Titolo Testata:
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
fascicolo: 1, volume: 63, anno: 2002,
pagine: 163 - 170
SICI:
0022-3697(200201)63:1<163:EOATOT>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
CONDUCTIVITY; ABSORPTION;
Keywords:
semiconductors; optical properties; chalcogenides; glasses; electrical properties;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Abd-Elrahman, MI Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt Assiut Univ Assiut Egypt 71516 hys, Assiut 71516, Egypt
Citazione:
A.A. Abu-Sehly e M.I. Abd-Elrahman, "Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films", J PHYS CH S, 63(1), 2002, pp. 163-170

Abstract

The optical absorption of the As-prepared and annealed As45.2Te46.6In8.2 thin films are studied. Films annealed at temperatures higher than 453 K show a decrease in the optical energy gap (E-o). The value of E-o increases from 1.9 to 2.43 eV with increasing thickness of the As-prepared films from 60 to 140 nm. The effect of thickness on high frequency dielectric constant (epsilon (infinity)) and carrier concentration (N) is also studied. The crystalline structures of the As45.2Te46.6In8.2 thin films resulting from heattreatment of the As-prepared film at different elevated temperatures is studied by X-ray diffraction. An amorphous-crystalline transformation is observed after annealing at temperatures higher than 453 K. The electrical conductivity at low temperatures is found due to the electrons transport by hopping among the localized states near the Fermi level. With annealing the films at temperatures higher than 473 K (the crystallization onset temperature) for 1 h, the electrical conductivity increases and the activation energydecreases, which can be attributed to the amorphous-crystalline transformations. (C) 2001 Elsevier Science Ltd. All rights reserved.

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Documento generato il 02/04/20 alle ore 22:00:13