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Titolo:
Kinetics of the Pd/In thin-film bilaver reaction: Implications for transient-liquid-phase wafer bonding
Autore:
Quitoriano, N; Wong, WS; Tsakalakos, L; Cho, Y; Sands, T;
Indirizzi:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA Univ Calif Berkeley Berkeley CA USA 94720 & Engn, Berkeley, CA 94720 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 11, volume: 30, anno: 2001,
pagine: 1471 - 1475
SICI:
0361-5235(200111)30:11<1471:KOTPTB>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
LASER LIFT-OFF; TEMPERATURE; GAAS;
Keywords:
intermetallic; palladium; indium; wafer bonding; materials; integration; laser lift-off; reaction kinetics;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Quitoriano, N MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA MIT Cambridge MA USA 02139 & Engn, Cambridge, MA 02139 USA
Citazione:
N. Quitoriano et al., "Kinetics of the Pd/In thin-film bilaver reaction: Implications for transient-liquid-phase wafer bonding", J ELEC MAT, 30(11), 2001, pp. 1471-1475

Abstract

The kinetic behavior of the Pd/In bilayer reaction is analyzed, with emphasis on the effect of nanometer-scale diffusion barriers at the Pd/In interface. It is shown that the Pd/In reaction proceeds rapidly and without a discernable incubation period at temperatures below 200 degreesC if the Pd/In interface is nominally free of either contamination or intentionally-deposited intervening layers. Air exposure of the Pd surface prior to In deposition is sufficient to delay the onset of the reaction to produce the intermetallic phase by PdIn3 for several minutes at 200 degreesC. This incubation period can be further controlled by deposition of a nanometer-scale Ti layeronto the Pd prior to air exposure and In deposition. The implications of these results for the design of transient-liquid-phase wafer-bonding processes based on Pd-In are discussed.

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Documento generato il 26/11/20 alle ore 10:56:07