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Titolo:
In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE
Autore:
Pitts, OJ; Watkins, SP; Wang, CX; Stotz, JAH; Thewalt, MLW;
Indirizzi:
Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada Simon Fraser Univ Burnaby BC Canada V5A 1S6 , Burnaby, BC V5A 1S6, Canada
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 11, volume: 30, anno: 2001,
pagine: 1412 - 1416
SICI:
0361-5235(200111)30:11<1412:IMSAOP>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE DIFFERENCE SPECTROSCOPY; EPITAXY; GAAS; HETEROSTRUCTURE; SEGREGATION; DOTS;
Keywords:
antimonides; GaSb; GaAs; quantum wells; monolayers; in-situ monitoring; RDS; reflectance anisotropy; segregation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Pitts, OJ Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada Simon Fraser Univ Burnaby BC Canada V5A 1S6 BC V5A 1S6, Canada
Citazione:
O.J. Pitts et al., "In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE", J ELEC MAT, 30(11), 2001, pp. 1412-1416

Abstract

We present a study of the growth of strained ultrathin GaSb quantum well (QW) layers in a GaAs host crystal by organometallic vapor phase epitaxy (OMVPE). We report surface anisotropy features observed by reflectance difference spectroscopy (RDS) during exposure of the GaAs (001) surface to trimethylantimony (TMSb) and during subsequent growth interruption. We demonstratethe formation of a floating layer of Sb during growth of GaAs over GaSb quantum well layers. The periodic nature of the RDS signal during growth of multiple quantum well (MQW) structures allows us to construct time-resolved RDS spectra, detailing the evolution of the surface anisotropy. We show howx-ray diffraction (XRD) data may be used to determine the graded compositional profile resulting from Sb segregation at the GaAs/GaSb interface. Photoluminescence (PL) spectra at 2 K from MQW structures exhibit two peaks below the GaAs bandgap. The lower-energy peak, which we attribute to a type-IItransition at the GaSb/GaAs interface, shifts logarithmically with excitation power density. The higher energy peak shows no shift with excitation power, and is attributed to a transition occurring within the graded barrier layers.

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Documento generato il 30/05/20 alle ore 14:51:01