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Titolo:
Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy
Autore:
Lin, CH; Hwu, RJ; Sadwick, LP;
Indirizzi:
Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA Univ Utah Salt Lake City UT USA 84112 Engn, Salt Lake City, UT 84112 USA Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA Univ Utah Salt Lake City UT USA 84112 Engn, Salt Lake City, UT 84112 USA
Titolo Testata:
JOURNAL OF MATERIALS RESEARCH
fascicolo: 11, volume: 16, anno: 2001,
pagine: 3266 - 3273
SICI:
0884-2914(200111)16:11<3266:IOCPOT>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; III-V COMPOUNDS; SURFACE SEGREGATION; GAAS; SI; SILICON; DOPANTS; MODEL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Lin, CH Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA Univ Utah Salt Lake City UT USA 84112 alt Lake City, UT 84112 USA
Citazione:
C.H. Lin et al., "Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy", J MATER RES, 16(11), 2001, pp. 3266-3273

Abstract

Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]Ga-As and {001} TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterizedthrough x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAslayer are stacking faults or microtwins, and they directly correlated withthe islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion massspectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 12:25:39