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Titolo:
Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy
Autore:
Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI;
Indirizzi:
Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Yusong Gu, Taejon 305340, South Korea Korea Res Inst Stand & Sci Taejon South Korea 305340 305340, South Korea Inje Univ, Dept Opt Engn, Kimhae 621749, South Korea Inje Univ Kimhae South Korea 621749 Opt Engn, Kimhae 621749, South Korea Chungbuk Natl Univ, Dept Phys, Chungju, South Korea Chungbuk Natl Univ Chungju South Korea Dept Phys, Chungju, South Korea
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1, volume: 234, anno: 2002,
pagine: 110 - 114
SICI:
0022-0248(200201)234:1<110:OPOIEG>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
LIGHT-EMITTING-DIODES; PHOTOLUMINESCENCE; TEMPERATURE;
Keywords:
optical microscopy; strain; molecular beam epitaxy; semiconducting III-V materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Leem, JY Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Yusong Gu, 1 ToryongDong, Taejon 305340, South Korea Korea Res Inst Stand & Sci 1 Toryong DongTaejon South Korea 305340
Citazione:
G.H. Kim et al., "Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy", J CRYST GR, 234(1), 2002, pp. 110-114

Abstract

InAs epilayers with thicknesses of 400, 500, 750, and 1500 nm were grown on GaAs by molecular beam epitaxy and their properties were investigated by reflection high-energy electron diffraction and photo luminescence (PL). For all InAs epilayers, the PL peak position measured at 10 K is blue-shiftedfrom that of bulk InAs, which could be largely due to the residual strain in the epilayer. InAs epilayers have PL peaks red-shifted to lower energy as the thickness of InAs layer is increased. This is the first observation on PL of sub-mum thick InAs epilayers grown on GaAs substrate. While the PL peak position of 400 nm thick InAs layer is linearly blue-shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of thicker InAs epilayers are gradually blue-shifted and then, saturated above a power of 75 mW. (C) 2002 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 18:15:55