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Titolo:
Growth of Si-doped InAs quantum dots and annealing effects on size distribution
Autore:
Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D;
Indirizzi:
Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Yusong Gu, Taejon 305340, South Korea Korea Res Inst Stand & Sci Taejon South Korea 305340 305340, South Korea Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea Chungnam Natl Univ Taejon South Korea 305764 Taejon 305764, South Korea Joongbu Univ, Dept Informat & Telecommun, Gumsan Gun 132940, South Korea Joongbu Univ Gumsan Gun South Korea 132940 umsan Gun 132940, South Korea Inje Univ, Dept Opt Engn, Kimhae 621749, South Korea Inje Univ Kimhae South Korea 621749 Opt Engn, Kimhae 621749, South Korea Kwangju Inst Sci & Technol, K JIST, Dept Informat & Commun, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1, volume: 234, anno: 2002,
pagine: 105 - 109
SICI:
0022-0248(200201)234:1<105:GOSIQD>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE-DEPENDENCE; PHOTOLUMINESCENCE LINEWIDTH; LUMINESCENCE; STATES;
Keywords:
optical microscopy; quantum dots; molecular beam epitaxy; semiconducting III-V materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Leem, JY Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Yusong Gu, 1 ToryongDong, Taejon 305340, South Korea Korea Res Inst Stand & Sci 1 Toryong DongTaejon South Korea 305340
Citazione:
J.S. Kim et al., "Growth of Si-doped InAs quantum dots and annealing effects on size distribution", J CRYST GR, 234(1), 2002, pp. 105-109

Abstract

We investigated the Si-doped InAs quantum dots (QDs) grown by molecular beam epitaxy and the annealing effects on the QD size distribution through photoluminescence (PL) spectroscopy. A double-peak feature in PL was observedfrom as-grown InAs QDs with Si-doping, and excitation intensity dependenceof PL indicated that the double-peak feature is related to the ground-state emission from In-As QDs with bimodal size distribution. The PL spectrum from Si-doped InAs QDs subjected to annealing treatment at 800 degreesC in nitrogen ambient showed three additional PL peaks and blue-shift of the do-able-peak feature observed from as-grown sample. The excitation-intensity-dependent PL and consideration of thermal stability of carriers through temperature-dependent PL measurement demonstrated that three additional peaks come from the InAs QDs with three new branches of QD occurring during annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.

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Documento generato il 02/10/20 alle ore 01:37:28