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Titolo:
Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
Autore:
Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T;
Indirizzi:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan Shizuoka Univ Hamamatsu Shizuoka Japan 432 Hamamatsu, Shizuoka 432, Japan Hamamatsu Photon KK, Cent Res Lab, Hamakita 434, Japan Hamamatsu Photon KK Hamakita Japan 434 Cent Res Lab, Hamakita 434, Japan Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1, volume: 234, anno: 2002,
pagine: 85 - 90
SICI:
0022-0248(200201)234:1<85:IPOLIE>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
CUTOFF WAVELENGTH; SINGLE-CRYSTALS; MU-M; INFRARED PHOTODETECTORS; GAAS;
Keywords:
purification; X-ray diffraction; melt epitaxy; narrow gap materials; semiconducting III-V materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Yamaguchi, T Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan Shizuoka Univ 3-5-1 Johoku Hamamatsu Shizuoka Japan 432 Japan
Citazione:
Y.Z. Gao et al., "Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats", J CRYST GR, 234(1), 2002, pp. 85-90

Abstract

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of thelong-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 09/07/20 alle ore 13:01:15