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Titolo:
Two-dimensional modelling of CH4-H-2 radio-frequency discharges for a-C : H deposition
Autore:
Leroy, O; Videlot, H; Jolly, J;
Indirizzi:
Univ Paris 11, Phys Gaz & Plasmas Lab, F-91405 Orsay, France Univ Paris 11 Orsay France F-91405 & Plasmas Lab, F-91405 Orsay, France Ecole Polytech, Lab Phys & Technol Plasmas, F-91128 Palaiseau, France Ecole Polytech Palaiseau France F-91128 asmas, F-91128 Palaiseau, France
Titolo Testata:
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
fascicolo: 2, volume: 16, anno: 2001,
pagine: 121 - 130
SICI:
1286-0042(200111)16:2<121:TMOCRD>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; DIAMOND-LIKE CARBON; SI-H; AMORPHOUS-SILICON; MASS-SPECTROMETRY; METHANE PLASMA; ELECTRON-IMPACT; CROSS-SECTIONS; KINETIC DATA; SURFACE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
38
Recensione:
Indirizzi per estratti:
Indirizzo: Leroy, O Univ Paris 11, Phys Gaz & Plasmas Lab, Batiment 212, F-91405 Orsay, France Univ Paris 11 Batiment 212 Orsay France F-91405 05 Orsay, France
Citazione:
O. Leroy et al., "Two-dimensional modelling of CH4-H-2 radio-frequency discharges for a-C : H deposition", EPJ-APPL PH, 16(2), 2001, pp. 121-130

Abstract

A two-dimensional numerical code, previously developed for the modelling of alpha -Si:H deposition in a SiH4/H-2 radio frequency cylindrical PECVD reactor, has been modified in order to perform the modelling of CH4/H-2 mixtures in the same experimental configuration. This model, which includes electrical and chemical modules, takes into account the transport and the chemistry of the charged and neutral species. The results of the models have been compared to measurements. The calculated electrical power coupled to the plasma and the self-bias voltages are compared to the experimental ones. The calculated radical densities are compared to those measured by threshold ionization mass spectroscopy at the substrate centre. Moreover, the calculated radial distribution of the deposition rate is compared to profilometry measurements. Eventually, results obtained here in CH4/H-2 are compared with those previously obtained in SiH4/H-2 plasmas under similar experimental conditions.

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Documento generato il 16/07/20 alle ore 19:27:04