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Titolo:
Effect of bismuth impurity on carrier density in PbSe : Bi : Se epitaxial layers
Autore:
Zykov, VA; Gavrikova, TA; Ilin, VI; Nemov, SA; Savintsev, PV;
Indirizzi:
St Petersburg State Tech Univ, St Petersburg 195251, Russia St Petersburg State Tech Univ St Petersburg Russia 195251 195251, Russia
Titolo Testata:
SEMICONDUCTORS
fascicolo: 11, volume: 35, anno: 2001,
pagine: 1254 - 1258
SICI:
1063-7826(2001)35:11<1254:EOBIOC>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
EMISSION MOSSBAUER-SPECTROSCOPY; COMPENSATION; SEMICONDUCTORS; POSITION; ATOMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Zykov, VA St Petersburg State Tech Univ, St Petersburg 195251, Russia St Petersburg State Tech Univ St Petersburg Russia 195251 ssia
Citazione:
V.A. Zykov et al., "Effect of bismuth impurity on carrier density in PbSe : Bi : Se epitaxial layers", SEMICONDUCT, 35(11), 2001, pp. 1254-1258

Abstract

The dependence of the Hall carrier density on bismuth concentration, n, p = f(N-Bi), in PbSe:Bi:Se/BaF2 films has been studied. The films were grown by vacuum condensation from two independent molecular beams (PbSe:Bi and Se-2) mixed directly at the surface of a (111)BaF2 substrate heated to 350 degreesC. The bismuth concentration in the stock was 0-0.3 at. %. Two specific portions can be distinguished in the experimental n, p = f(N-Bi) dependence. At N-Bi > 0.0375 at. %, the electron density is close to N-Bi; at low bismuth concentrations, N-Bi < 0.0375 at. %, the linear run of the n = f(N-Bi) dependence is violated, and the conduction changes to p-type. All the doped films under study are saturated with selenium. This is a necessary condition for obtaining the highest electron densities in the films at N-Bi corresponding to the linear portion of the n = f(N-Bi) dependence. The resultsare discussed in terms of a thermodynamic model of the impurity interaction with intrinsic defects in PbSe, taking into account the amphoteric behavior of bismuth atoms in lead selenide. (C) 2001 MAIK "Nauka/Interperiodica".

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Documento generato il 07/06/20 alle ore 08:35:47