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Titolo:
Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency
Autore:
Shinohara, K; Yamashita, Y; Endoh, A; Hikosaka, K; Matsui, T; Mimura, T; Hiyamizu, S;
Indirizzi:
Commun Res Labs, Tokyo 1848795, Japan Commun Res Labs Tokyo Japan 1848795 ommun Res Labs, Tokyo 1848795, Japan Fujitsu Ltd, Kanagawa 2430197, Japan Fujitsu Ltd Kanagawa Japan 2430197Fujitsu Ltd, Kanagawa 2430197, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ Osaka Japan 5608531 , Grad Sch Engn Sci, Osaka 5608531, Japan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 11, volume: 22, anno: 2001,
pagine: 507 - 509
SICI:
0741-3106(200111)22:11<507:UPIHW4>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-MOBILITY TRANSISTORS;
Keywords:
cutoff frequency; gate length; HEMT; InGaAs/InAlAs; InP; pseudomorphic; saturation velocity; short-channel effect;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Shinohara, K Commun Res Labs, Tokyo 1848795, Japan Commun Res Labs TokyoJapan 1848795 s, Tokyo 1848795, Japan
Citazione:
K. Shinohara et al., "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency", IEEE ELEC D, 22(11), 2001, pp. 507-509

Abstract

An excellent cutoff frequency (f(t)) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L-g)dependence of electron transit time (tau (transit)) implied an increased saturation velocity (v(s)) of 3.6 x 10(7) cm/s in the developed pseudomorphic HEMTs. This f(t) is the highest value ever reported for any transistors to date.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 08/04/20 alle ore 08:52:57