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Titolo:
Surface morphology of Ga adsorbed Si(113) surface
Autore:
Suzuki, H; Nakahara, H; Miyata, S; Ichimiya, A;
Indirizzi:
Nagoya Univ, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 Univ, Nagoya, Aichi 4648603, Japan
Titolo Testata:
SURFACE SCIENCE
fascicolo: 1-3, volume: 493, anno: 2001,
pagine: 166 - 172
SICI:
0039-6028(20011101)493:1-3<166:SMOGAS>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
BEAM EPITAXIAL-GROWTH; SI; SEGREGATION; SILICON; ATOMS; MBE;
Keywords:
reflection high-energy electron diffraction (RHEED); scanning tunneling microscopy; surface structure, morphology, roughness, and topography; silicon; gallium; high index single crystal surfaces;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Suzuki, H Nagoya Univ, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 ya, Aichi 4648603, Japan
Citazione:
H. Suzuki et al., "Surface morphology of Ga adsorbed Si(113) surface", SURF SCI, 493(1-3), 2001, pp. 166-172

Abstract

Surface morphology and reconstruction of Ga adsorbed Si(113) surface have been investigated using scanning tunneling microscopy and reflection high-energy electron diffraction. Surface reconstruction changes from clean 3 x 2structure to 3 x 1 structure at 0.2 ML Ga deposition. Then the surface changes to 2 x 2 structure at 0.4 ML Ga deposition. For more than I ML Ga deposition, well-ordered one-dimensional facet structure is formed with its width of about 5 nm. The two faces of the facet are determined as (112) and (115) surfaces. The surfaces have N x 1 (N = 4-8) and 4 x 1 reconstructions, respectively. On (112) facet, mostly observed structure is 6 x 1, and this result agrees with previously reported result of Ga. deposition on flat (112) surface. While on (115) surface, two kinds of 4 x 1 structures which aresymmetric to [33 (2) over bar] direction are observed. It is considered that nucleation of (112) facet leads a flat (113) surface to facet structure. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 29/03/20 alle ore 08:06:13