Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Novel semiconductor nanostructures by functional self-organized epitaxy
Autore:
Ploog, KH; Notzel, R;
Indirizzi:
Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt Berlin Germany D-10117 7 Berlin, Germany
Titolo Testata:
PHYSICA E
fascicolo: 2-3, volume: 11, anno: 2001,
pagine: 78 - 88
SICI:
1386-9477(200110)11:2-3<78:NSNBFS>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SIDEWALL QUANTUM WIRES; MOLECULAR-BEAM EPITAXY; PATTERNED GROWTH; SELECTIVITY;
Keywords:
III-V semiconductors; molecular beam epitaxy; patterned growth; quantum wires; quantum dots;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Ploog, KH Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 Berlin GermanyD-10117
Citazione:
K.H. Ploog e R. Notzel, "Novel semiconductor nanostructures by functional self-organized epitaxy", PHYSICA E, 11(2-3), 2001, pp. 78-88

Abstract

We review our recent results on GaAs sidewall quantum wires., quantum dotsand coupled wire-dot arrays fabricated by functional selforganized epitaxyon patterned GaAs(3 1 1)A. The distinct selectivity of (Al,Ga)As growth onpatterned GaAs(3 1 1)A allows for strong lateral confinement of photogenerated carriers up to room temperature. Quasi-planar arrays of these semiconductor nanostructures are of unprecedented uniformity, and they can be positioned on the wafer with high accuracy. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 13:22:20