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Titolo:
Fundamental aspects of organometallic vapor phase epitaxy
Autore:
Stringfellow, GB;
Indirizzi:
Univ Utah, Coll Engn, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA Univ Utah Salt Lake City UT USA 84112 Engn, Salt Lake City, UT 84112 USA
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 2, volume: 87, anno: 2001,
pagine: 97 - 116
SICI:
0921-5107(20011115)87:2<97:FAOOVP>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SURFACE-DIFFUSION LENGTH; TANDEM SOLAR-CELLS; STEP STRUCTURE; VICINAL SURFACES; MOMBE GROWTH; GAAS MOCVD; MBE GROWTH; 001 GAAS;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
129
Recensione:
Indirizzi per estratti:
Indirizzo: Stringfellow, GB Univ Utah, Coll Engn, Dept Mat Sci & Engn, Rm 214,1495 E 100 S, Salt Lake City, UT 84112 USA Univ Utah Rm 214,1495 E 100 S Salt LakeCity UT USA 84112
Citazione:
G.B. Stringfellow, "Fundamental aspects of organometallic vapor phase epitaxy", MAT SCI E B, 87(2), 2001, pp. 97-116

Abstract

This review discusses new developments in our attempts to understand the fundamental aspects of organometallic vapor phase epitaxy (OMVPE), a processnow widely used in the manufacture of III/V materials for photonic and electronic applications. It includes discussions of thermodynamic, hydrodynamic, and kinetic aspects of the growth process, with an emphasis on recent developments in the area of surface processes, The bonding at the surface during OMVPE growth is found to be determined mainly by thermodynamic factors. However, features such as steps and kinks are controlled by kinetic factors. The surface bonding, including that determined by the step structure, isjust being discovered as being a key determining factor in the fundamentalgrowth processes, including adsorption/desorption, surface pyrolysis reactions, and surface diffusion. Thus, surface processes determine many aspectsof the growth process and, in many cases, the properties of the resulting epitaxial layers. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 12:15:15