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Titolo:
Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
Autore:
Georgiev, N; Mozume, T;
Indirizzi:
Femtosecond Technol Res Assoc, FESTA, Tsukuba, Ibaraki 30026, Japan Femtosecond Technol Res Assoc Tsukuba Ibaraki Japan 30026 ki 30026, Japan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 5, volume: 19, anno: 2001,
pagine: 1747 - 1751
SICI:
1071-1023(200109/10)19:5<1747:OPOITI>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; INTERFACE STRAIN; BAND OFFSETS; PHOTOLUMINESCENCE; HETEROSTRUCTURES; SUPERLATTICES; TRANSITIONS; ABSORPTION; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Georgiev, N Femtosecond Technol Res Assoc, FESTA, 5-5 Tokodai, Tsukuba, Ibaraki 30026,Japan Femtosecond Technol Res Assoc 5-5 Tokodai Tsukuba IbarakiJapan 30026
Citazione:
N. Georgiev e T. Mozume, "Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP", J VAC SCI B, 19(5), 2001, pp. 1747-1751

Abstract

InGaAs/AlAsSb quantum well structures have been grown by molecular beam epitaxy nominally lattice matched to InP substrates and characterized by photoluminescence. The exciton transitions from the n=1 electron to heavy-hole subbands were investigated and the band-edge discontinuity of an InGaAs/AlAsSb heterostructure was evaluated using an envelope function method. The type I band lineup with a band-edge discontinuity was estimated to be about 1.6 eV for As terminated samples, which exhibit the lowest compositional fluctuations across heterointerfaces. The dominant photoluminescence line-broadening mechanisms were found to be monolayer fluctuations in the well widthand a random alloy compositional variation in sublayers, as well as exciton-optical phonon scattering. Using an optimized growth condition, short intersubband transitions in the 1.3-1.5 mum wavelength range were measured in the coupled double quantum well structures. (C) 2001 American Vacuum Society.

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Documento generato il 19/09/20 alle ore 17:29:02