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Titolo:
High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate
Autore:
Sakai, M; Tsutsumi, T; Yoshioka, T; Masuda, A; Matsumura, H;
Indirizzi:
JAIST, Tatsunokuchi, Ishikawa 9231292, Japan JAIST Tatsunokuchi Ishikawa Japan 9231292 okuchi, Ishikawa 9231292, Japan
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 395, anno: 2001,
pagine: 330 - 334
SICI:
0040-6090(20010903)395:1-2<330:HPATFT>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Keywords:
catalytic chemical vapor deposition; hydrogenated amorphous silicon; thin film transistors; mobility; silicon nitride films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Sakai, M JAIST, Tatsunokuchi, Ishikawa 9231292, Japan JAIST Tatsunokuchi Ishikawa Japan 9231292 shikawa 9231292, Japan
Citazione:
M. Sakai et al., "High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate", THIN SOL FI, 395(1-2), 2001, pp. 330-334

Abstract

We have developed high performance amorphous silicon thin film transistorsby catalytic chemical vapor deposition (Cat-CVD) method. The amorphous silicon films deposited at a high rate (1.9 nm s(-1)) have shown a low spin density (1.6X10(16) cm(-3)), measured by electron spin resonance. Thin film transistors, with a field effect mobility of approximately 0.85 cm(2) V(-1)s(-1), were obtained with the gate SiNx and phosphorous-doped amorphous silicon layers also fabricated by Cat-CVD. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 19:56:08