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Titolo:
Photo-thermal excitation gas-source MBE growth of super-doped Si : Mn for spin-photonics applications
Autore:
Nakayama, H; Ohta, H; Kulatov, E;
Indirizzi:
Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan Osaka City Univ Osaka Japan 5588585 , Sumiyoshi Ku, Osaka 5588585, Japan Kobe Univ, Fac Sci, Dept Phys, Nada Ku, Kobe, Hyogo 6578501, Japan Kobe Univ Kobe Hyogo Japan 6578501 s, Nada Ku, Kobe, Hyogo 6578501, Japan Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia Russian Acad Sci Moscow Russia 117942 st Gen Phys, Moscow 117942, Russia
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 395, anno: 2001,
pagine: 230 - 234
SICI:
0040-6090(20010903)395:1-2<230:PEGMGO>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
AUGER-ELECTRON SPECTROSCOPY; SEMICONDUCTORS;
Keywords:
silicon; manganese; Auger electron spectroscopy; MBE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Nakayama, H Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, 3-3-138 Sugimoto,Osaka 5588585, Japan Osaka City Univ 3-3-138 Sugimoto Osaka Japan 5588585 5, Japan
Citazione:
H. Nakayama et al., "Photo-thermal excitation gas-source MBE growth of super-doped Si : Mn for spin-photonics applications", THIN SOL FI, 395(1-2), 2001, pp. 230-234

Abstract

Crystalline Si thin films doped with transition metal elements far beyond the solid solubility are named here as 'super-doped Si:TM' (TM = transitionmetals). Super-doped Si:Mn thin films with doping levels of more than 10% have been grown by using a photo-thermal excitation gas-source molecular beam epitaxy (GSMBE) technique. The GSMBE apparatus used here was equipped with a 'hot W-filament cell', and hence it is called photo-thermal excitationGSMBE. The hot W-filament cell decomposed quite effectively the source of SiCl2H2 molecules and enabled the growth of polycrystalline super-doped Si:Mn solid-solution films at substrate temperatures as low as 300 degreesC. Auger electron spectroscopy has revealed the characteristic valence electronspectra arising from the valence-electron hybridization between 3d electrons of Mn and s-p electrons of Si. (C) 2001 Elsevier Science B.V. All rightsreserved.

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Documento generato il 28/03/20 alle ore 14:20:30