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Titolo:
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
Autore:
Feng, Y; Zhu, M; Liu, F; Liu, J; Han, H; Han, Y;
Indirizzi:
Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100039, Peoples R China Chinese Acad Sci Beijing Peoples R China 100039 100039, Peoples R China Chinese Acad Sci, Lab Semicond Mat Sci, Beijing 100039, Peoples R China Chinese Acad Sci Beijing Peoples R China 100039 100039, Peoples R China Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100084, Peoples R China Chinese Acad Sci Beijing Peoples R China 100084 100084, Peoples R China
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 395, anno: 2001,
pagine: 213 - 216
SICI:
0040-6090(20010903)395:1-2<213:SEOPST>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; HYDROGEN;
Keywords:
poly-Si; structure; hot-wire; plasma-enhanced chemical vapor deposition (PECVD);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Zhu, M Chinese Acad Sci, Grad Sch, Dept Phys, POB 3908, Beijing 100039, Peoples RChina Chinese Acad Sci POB 3908 Beijing Peoples R China 100039 es RChina
Citazione:
Y. Feng et al., "Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD", THIN SOL FI, 395(1-2), 2001, pp. 213-216

Abstract

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f)on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared(FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when ahigh T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomicH concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 25/11/20 alle ore 01:15:52